Cypress Semiconductor’s F-RAM is ideal for portable medical, wearable, IoT sensor, industrial, and automotive applications
Cypress Semiconductor’s Excelon is next-generation Ferroelectric RAM (F-RAM) which delivers the industry’s lowest-power mission-critical nonvolatile memory by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write cycle endurance. This makes Excelon the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial, and automotive applications.
Features
- Up to 150x reduction in typical standby current (1 µA) and hibernate current (0.1 µA) compared to current F-RAMs
- Greater than 10x increase in performance with the addition of a 108 MHz Quad SPI (QSPI) compared to competing SPI F-RAMs
- Offers NoDelay™ writes to capture data instantly with no soak time requirement and without any additional components for power back-up
- 2 Mb, 4 Mb, and 8 Mb density options
- Operating voltage range: 1.71 V to 1.89 V and 1.80 V to 3.60 V
- Commercial (0°C to +70°C), industrial (-40°C to +85°C), Auto-A (-40°C to +85°C), and Auto-E (-40°C to +125°C) temperature grades
Excelon-LP And Excelon-Ultra Individual Features
- Multiple power-saving modes, including hibernate, deep power-down, and standby
- Consume 200x less energy than EEPROM and 3,000x less energy than NOR Flash products
- Read/write endurance of 1,000 trillion write cycles to log data every millisecond for more than 3,000 years
- Introduce 8 Mb density F-RAM to meet the growing data-logging requirement in modern applications
- Available in small footprint: 10 mm², 8-pin GQFN package
Excelon-Auto Individual Features
- Captures data instantly with no soak time requirement and also no additional back-up components
- Supports endurance cycling of 1,000 trillion write cycles to log data every µs for 20 years
- Provides AEC-Q100-qualified and functional safety-compliant memory components
Read more: EXCELON™ FERROELECTRIC-RAM (F-RAM™)
