Renesas Electronics Achieves Lowest Embedded SRAM Power of 13.7 nW/Mbit

Renesas Electronics Corporation announced the successful development of a new low-power SRAM circuit technology that achieves a record ultra-low power consumption of 13.7 nW/Mbit in standby mode. The prototype SRAM also achieves a high-speed readout time of 1.8 ns during active operation. Renesas Electronics applied its 65nm node silicon on thin buried oxide (SOTB) process to develop this …

Renesas Electronics Achieves Lowest Embedded SRAM Power of 13.7 nW/Mbit Read More »