News & Updates

NEW GRAPHENE HALL EFFECT SENSOR TO IMPROVE ACCURACY AND PRECISION IN MAGNETIC MEASUREMENT APPLICATIONS

NEW GRAPHENE HALL EFFECT SENSOR TO IMPROVE ACCURACY AND PRECISION IN MAGNETIC MEASUREMENT APPLICATIONS

The Cambridge-based startup, Paragraf has collaborated with the Magnetic Measurement section at CERN to demonstrate the potential of graphene-based Hall effect sensors to improve accuracy in magnetic measurement applications. Overcoming the shortfalls of existing Hall effect sensors that exhibit planar Hall effects that produce false signals, Hall effect Sensor from Paragraf truly senses magnetic fields along one direction giving a negligible planar

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OLIMEX STMP15X SOM AND STMP1A13 EVB EVAL BOARD BASED ON STM32MP1 SOC

OLIMEX STMP15X-SOM AND STMP1(A13)-EVB EVAL BOARD BASED ON STM32MP1 SOC

We saw several STM32MP1 SoC-based modules and SBCs entering the market in 2020. These include Ka-Ro Electronics’ QSMP module, Shiratech’s Stinger96 SBC, Exor Embedded NanoSOM nS02 module, and Octavo’s OSD32MP15x SiP module harnessing the functionalities of STM32MP1. Recently, Olimex unveiled the release of STMicroelectronics’ STM32MP1 SoC-based products, the STMP15X-SOM SoM, and the STMP1(A13)-EVB eval board. The STM32MP15X SoC features dual-core Arm Cortex-A7/M4 combined with an LCD interface, dedicated to

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AXIOMTEK’S ULTRA COMPACT EDGE AI SYSTEM POWERED BY NVIDIA® JETSON NANO™ – AIE100 903 FL

AXIOMTEK’S ULTRA-COMPACT EDGE AI SYSTEM POWERED BY NVIDIA® JETSON NANO™ – AIE100-903-FL

Axiomtek – a world-renowned leader relentlessly devoted in the research, development and manufacture of series of innovative and reliable industrial computer products of high efficiency – is pleased to release the AIE100-903-FL, an ultra-compact edge AI system. The high-performance AIE100-903-FL is powered by the NVIDIA® Jetson Nano™ module, which has a powerful quad-core ARM® Cortex®-A57 MPCore processor

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NEXPERIA RELEASES NEW GAN FET DEVICES 1

NEXPERIA RELEASES NEW GAN FET DEVICES

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance. Features of the new GaN FET devices, per

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